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KT814B
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KT814B

SKU: KT814B
KT814B Transistor Silicon PNP CASE: TO126 MAKE: USSR
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer USSR
Vbr CEO 50
Max. PD (W) 10
Derate (Amb) (W/°C) 100m
Min hFE 40
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Polarity PNP
R(sat) (Û) 1.2
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 125
@VCE (V) 2.0i
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 1267849
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