KT814G

SKU: KT814G

KT814G Transistor Silicon PNP CASE: TO126 MAKE: USSR

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO126
Manufacturer	USSR
Vbr CEO	100
Max. PD (W)	10
Derate (Amb) (W/°C)	100m
Min hFE	30
Ic Max. (A)	1.5
@Ic (test) (A)	150m
Polarity	PNP
R(sat) (Û)	1.2
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	125
@VCE (V)	2.0i
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	60 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	1267879

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