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KT819V
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KT819V

SKU: KT819V
KT819V Transistor Silicon NPN CASE: TO220AB MAKE: USSR
Product specifications
Type Transistor Silicon NPN
Case TO220AB
Manufacturer USSR
Vbr CEO 70
Max. PD (W) 100
Min hFE 15
Ic Max. (A) 15
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
R(sat) (Û) 400m
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 125
@VCE (V) 5.0i
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 1274329
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