The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
KT827B
View detailed images (13)

KT827B

SKU: KT827B
KT827B Transistor Silicon NPN CASE: TO3 MAKE: USSR
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer USSR
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 125
Max. hFE 18k
Min hFE 750
Ic Max. (A) 20
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 1m
Polarity NPN
Tr Max. (s) 4.5u
Oper. Temp (°C) Max. 175
@VCE (V) 3
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 750
SKU 541107
Back