KT835B
View detailed images (5)

KT835B

SKU: KT835B
KT835B Transistor Silicon PNP CASE: TO257 MAKE: USSR
Product specifications
Type Transistor Silicon PNP
Case TO257
Manufacturer USSR
Vbr CBO 45
Vbr CEO 30
Max. PD (W) 1
Max. hFE 100
Min hFE 10
Ic Max. (A) 7.5
@Ic (test) (A) 2
Icbo Max. @Vcb Max. (A) 150u
Polarity PNP
Oper. Temp (°C) Max. 125
@VCE (V) 5
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 6.2 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 7.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 1268634
Back