LDA417

SKU: LDA417

LDA417 Transistor Silicon PNP CASE: TO122 MAKE: NAPC

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO122
Manufacturer	NAPC
Vbr CBO	30
Vbr CEO	30
Max. PD (W)	360m
C(ob) (F)	400f
Derate (Amb) (W/°C)	2.9m
hfe	40
Ic Max. (A)	30m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	1.6G
@VCE (test) (V)	10
Oper. Temp (°C) Max.	140
@Ic (A)	2.0m
Pinout Equivalence Number	4-27
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.36 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Collector Current \|Ic max\|	0.03 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	1600 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	1279362

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