LDTA114WET1G
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LDTA114WET1G

SKU: LDTA114WET1G
LDTA114WET1G Transistor Silicon PNP CASE: SC89 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SC89
Manufacturer Generic
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 24
SMD Transistor Code L6
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 2.1
SKU 1435909
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