The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
LDTB114GKT1G
View detailed images (1)

LDTB114GKT1G

SKU: LDTB114GKT1G
LDTB114GKT1G Transistor Silicon PNP CASE: SC89 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SC89
Manufacturer Generic
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SMD Transistor Code K7
Built in Bias Resistor R2 10 kOhm
SKU 1435933
Back