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LDTC114WET1G
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LDTC114WET1G

SKU: LDTC114WET1G
LDTC114WET1G Transistor Silicon Pre-Biased-NPN CASE: SC89 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SC89
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 24
SMD Transistor Code M4
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 2.1
SKU 1435947
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