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LDTC123JET1G
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LDTC123JET1G

SKU: LDTC123JET1G
LDTC123JET1G Transistor Silicon Pre-Biased-NPN CASE: SC89 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SC89
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code 8M
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 1435956
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