LDTD123EET1G
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LDTD123EET1G

SKU: LDTD123EET1G
LDTD123EET1G Transistor Silicon Pre-Biased-NPN CASE: SC89 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SC89
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 39
SMD Transistor Code E5
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 2.2 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1435985
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