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LDTDG12GPT1G
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LDTDG12GPT1G

SKU: LDTDG12GPT1G
LDTDG12GPT1G Transistor Silicon Pre-Biased-NPN CASE: SC89 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SC89
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SMD Transistor Code Q7
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 0.045
SKU 1435990
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