| Weight |
0.01 kg
|
| Type |
Transistor Silicon Pre-Biased-NPN |
| Case |
DIP18 |
| Manufacturer |
Mitsubishi |
| Min hFE |
80 |
| Polarity |
Pre-Biased-NPN |
| PD Max. (W) |
1.8 |
| @VCE (test) (V) |
4.0 |
| @Ic (test) |
30m |
| Ic Max. |
50m |
| Vceo Max. |
40 |
| Pinout Equivalence Number |
18-87 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
1.1 W |
| Maximum Collector-Emitter Voltage |Vce| |
40 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
0.05 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Forward Current Transfer Ratio (hFE), MIN |
80 |
| Built in Bias Resistor R1 |
2 kOhm |
| Built in Bias Resistor R2 |
13.6 kOhm |
| Typical Resistor Ratio R1/R2 |
0.15 |
| SKU |
77646 |