| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
16P2N-A |
| Manufacturer |
Mitsubishi |
| Min hFE |
1.0k |
| Polarity |
NPN |
| PD Max. (W) |
1.5 |
| @VCE (test) (V) |
4.0 |
| @Ic (test) |
300m |
| Ic Max. |
400m |
| Vceo Max. |
40 |
| Pinout Equivalence Number |
16-101 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
1.47 W |
| Maximum Collector-Emitter Voltage |Vce| |
40 V |
| Maximum Emitter-Base Voltage |Veb| |
40 V |
| Maximum Collector Current |Ic max| |
0.4 A |
| Max. Operating Junction Temperature (Tj) |
75 °C |
| Forward Current Transfer Ratio (hFE), MIN |
1000 |
| SKU |
238209 |