| M54532P Datasheet |
| Type | Transistor Silicon NPN | |
| Case | DIP16 | |
| Manufacturer | Mitsubishi | |
| Min hFE | 800 | |
| Polarity | NPN | |
| PD Max. (W) | 2.5 | |
| @VCE (test) (V) | 4.0 | |
| @Ic (test) | 1.0 | |
| Ic Max. | 1.25 | |
| Vceo Max. | 50 | |
| Pinout Equivalence Number | 16-102 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 1.92 W | |
| Maximum Collector-Emitter Voltage |Vce| | 50 V | |
| Maximum Emitter-Base Voltage |Veb| | 10 V | |
| Maximum Collector Current |Ic max| | 1.5 A | |
| Max. Operating Junction Temperature (Tj) | 75 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 800 | |
| SKU | 18599 | |