MA112

SKU: MA112

MA112 Transistor Germanium PNP CASE: TO5-8 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5-8
Manufacturer	Matsushita Electronics
Vbr CBO	15
Vbr CEO	15
Max. PD (W)	175m
hfe	30
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	15u
I(io) Max. (A)	4.0n
V(io) Max. (V)	3.0m
Polarity	PNP
PD Max. (W)	500u
@VCE (test) (V)	6.0
Inp Bias Curr. Max. (A)	15n
Unity Gain BW (Hz)	50k
Com Mode Inp Range (VICR)	7.0
Temp Coef. of VIO	15u
Oper. Temp (°C) Min	0
Oper. Temp (°C) Max.	100
@Ic (A)	1.0m
Pinout Equivalence Number	N/A
No. of Pins	8
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.175 W
Maximum Collector-Base Voltage \|Vcb\|	15 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Emitter-Base Voltage \|Veb\|	15 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	85 °C
Forward Current Transfer Ratio (hFE), MIN	30
SMD Transistor Code	1C
SKU	549524

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