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MA113
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MA113

SKU: MA113
MA113 Transistor Germanium PNP CASE: TO5 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Matsushita Electronics
Vbr CBO 15
Vbr CEO 15
Max. PD (W) 175m
hfe 50
R(in) (Û) 100M
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 15u
V(io) Max. (V) 100m
Polarity PNP
PD Max. (W) 600m
@VCE (test) (V) 6.0
Inp Bias Curr. Max. (A) 30p
Unity Gain BW (Hz) 20M
Oper. Temp (°C) Min 0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
No. of Pins N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.175 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 50
SKU 549525
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