MBT3906DW1T2G
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MBT3906DW1T2G

SKU: MBT3906DW1T2G
MBT3906DW1T2G Transistor Silicon PNP CASE: SOT363 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SOT363
Manufacturer Generic
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.5 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code A2
SKU 1436226
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