| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO122 |
| Manufacturer |
Dickson Electronics |
| Vbr CBO |
60 |
| Vbr CEO |
40 |
| Max. PD (W) |
400m |
| C(ob) (F) |
8.0p |
| t(f) Max. (S) |
100n+ |
| hfe |
2.0 |
| Ic Max. (A) |
200m |
| Icbo Max. @Vcb Max. (A) |
20n |
| Polarity |
PNP |
| Tr Max. (s) |
45n |
| t(stor) Max. (S) |
80n |
| Trans. Freq (Hz) Min. |
200M |
| @VCE (test) (V) |
20 |
| Oper. Temp (°C) Max. |
140 |
| @Ic (A) |
50m |
| Pinout Equivalence Number |
4-27 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.4 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
40 V |
| Maximum Collector Current |Ic max| |
0.2 A |
| Max. Operating Junction Temperature (Tj) |
140 °C |
| Collector Capacitance (Cc) |
8 pF |
| Transition Frequency (ft): |
200 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
535317 |