| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
SOT93 |
| Manufacturer |
Mitsubishi |
| Vbr CBO |
40 |
| Vbr CEO |
40 |
| Max. PD (W) |
80 |
| Derate (Amb) (W/°C) |
640m |
| Min hFE |
20 |
| Ic Max. (A) |
10 |
| @Ic (test) (A) |
3.0 |
| Icbo Max. @Vcb Max. (A) |
400u |
| Ir @ Diff. Temp (A) |
500u |
| VRRM |
75 |
| Polarity |
PNP |
| R(sat) (Û) |
400m |
| 1-Cycle Surge Current (A) |
500m |
| @Temp (test) (°C) |
25 |
| Volt |
300= |
| Vf Max. |
1.0 |
| Ir @25°C |
30u |
| I(out) (If AVG) Max. |
50m |
| Trans. Freq (Hz) Min. |
3.0M |
| @Volts (test) (V) |
10 |
| @If (test) |
5.0m |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
4.0 |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
80 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
40 V |
| Maximum Collector Current |Ic max| |
10 A |
| Max. Operating Junction Temperature (Tj) |
140 °C |
| Transition Frequency (ft): |
3 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
551820 |