The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
ME2002

ME2002

SKU: ME2002
ME2002 Transistor Silicon NPN CASE: TO106 MAKE: Marvell
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer Marvell
Vbr CBO 35
Vbr CEO 25
Max. PD (W) 300m
C(ob) (F) 5.0p
Derate (Amb) (W/°C) 2.0m
hfe 100
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 4 V
Max. Operating Junction Temperature (Tj) 165 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 385039
Back