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ME3011
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ME3011

SKU: ME3011
ME3011 Transistor Silicon NPN - Case: TO106 Make: Micron Technology
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Product specifications
Case TO106
Type Transistor Silicon NPN
Manufacturer Micron Technology
Vbr CBO 30
Vbr CEO 12
Max. PD (W) 200m
C(ob) (F) 1.4p
Derate (Amb) (W/°C) 1.6m
hfe 50
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
Trans. Freq (Hz) Min. 900M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 8.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 165 °C
Collector Capacitance (Cc) 2.8 pF
Transition Frequency (ft): 450 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 385041
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