MG100H2DL1
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MG100H2DL1

SKU: MG100H2DL1
MG100H2DL1 Transistor Silicon NPN CASE: X99 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case X99
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 400 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 550 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 100 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 800 pF
Forward Current Transfer Ratio (hFE), MIN 80
SKU 1436267
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