The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
Print
Home / Actives / Transistor / MG100H2YS1
MG100H2YS1
View detailed images (1)

MG100H2YS1

SKU: MG100H2YS1
MG100H2YS1 Transistor CASE: MODULE MAKE: Toshiba
Product specifications
Type Transistor
Case MODULE
Manufacturer Toshiba
Max. Burst (V) 500
Ckts Per Dev. 1
Max. PD (W) 400
t(on) Delay (S) 1.5u
t(f) Max. (S) 1.0u
Ic Max. (A) 100
Ie Max. (A) 1.0m
I(ges) Max (A) 500n
Tr Max. (s) 1.5u
Therm Res. (J-C) 310m
VCE(sat) Max. 5.0
Oper. Temp (°C) Max. 150
Isolated Case (Y/N) Yes
Pinout Equivalence Number 7-12
SKU 252782
Back