| Weight |
0.01 kg
|
| Type |
Semiconductor |
| Case |
MODULE |
| Manufacturer |
Toshiba |
| Vbr CBO |
600 |
| Vbr CEO |
450 |
| Ckts Per Dev. |
1 |
| Max. PD (W) |
100 |
| t(f) Max. (S) |
2.0u |
| Min hFE |
100 |
| Ic Max. (A) |
15 |
| @Ic (test) (A) |
15 |
| Polarity |
NPN |
| Tr Max. (s) |
1.0u |
| Therm Res. (J-C) |
1.3 |
| VCE(sat) Max. |
2.0 |
| Oper. Temp (°C) Max. |
150 |
| Isolated Case (Y/N) |
Yes |
| Pinout Equivalence Number |
15-3 |
| Maximum Collector Power Dissipation (Pc) |
100 W |
| Maximum Collector-Base Voltage |Vcb| |
600 V |
| Maximum Collector-Emitter Voltage |Vce| |
600 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
15 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
400 pF |
| Forward Current Transfer Ratio (hFE), MIN |
100 |
| SKU |
252836 |