MG200H1AL1

SKU: MG200H1AL1

MG200H1AL1 Transistor Silicon NPN CASE: X99 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	X99
Manufacturer	Generic
Vbr CEO	550
Max. PD (W)	800
Min hFE	80
Ic Max. (A)	200
@Ic (test) (A)	200
Icbo Max. @Vcb Max. (A)	2.0m
Mat.	Silicon Logic
Polarity	NPN
@VCE (test)	5.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	800 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	550 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	200 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	1000 pF
Forward Current Transfer Ratio (hFE), MIN	80
SKU	252855

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