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Home / Actives / Transistor / MG25N2YS1
MG25N2YS1
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MG25N2YS1

SKU: MG25N2YS1
MG25N2YS1 Transistor CASE: MODULE MAKE: Toshiba
Product specifications
Type Transistor
Case MODULE
Manufacturer Toshiba
Max. Burst (V) 1000
Ckts Per Dev. 1
Max. PD (W) 200
t(on) Delay (S) 1.0u
t(f) Max. (S) 1.0u
Ic Max. (A) 25
Ie Max. (A) 1.0m
I(ges) Max (A) 500n
Tr Max. (s) 1.0u
Therm Res. (J-C) 625m
VCE(sat) Max. 5.0
Oper. Temp (°C) Max. 150
Isolated Case (Y/N) Yes
Pinout Equivalence Number 7-12
SKU 599385
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