The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
Home / Actives / Transistor / MG300Q1UK1
MG300Q1UK1

MG300Q1UK1

SKU: MG300Q1UK1
MG300Q1UK1 Transistor CASE: MODULE MAKE: Toshiba
Datasheet
MG300Q1UK1 Datasheet
Product specifications
Type Transistor
Case MODULE
Manufacturer Toshiba
Vbr CBO 1.2k
Vbr CEO 900
Ckts Per Dev. 1
Max. PD (W) 1.6k
t(f) Max. (S) 5.0u
Min hFE 100
Ic Max. (A) 300
@Ic (test) (A) 300
Tr Max. (s) 4.0u
Therm Res. ÚJC (°C/W) 325m
Therm Res. (J-C) 78m
VCE(sat) Max. 2.5
Oper. Temp (°C) Max. 150
Isolated Case (Y/N) Yes
Pinout Equivalence Number 5-7
SKU 252907
Back