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Home / Actives / Transistor / MG30G2DL1
MG30G2DL1

MG30G2DL1

SKU: MG30G2DL1
MG30G2DL1 Transistor CASE: MODULE MAKE: Toshiba
Datasheet
MG30G2DL1 Datasheet
Product specifications
Type Transistor
Case MODULE
Manufacturer Toshiba
Vbr CBO 600
Vbr CEO 450
Ckts Per Dev. 2
Max. PD (W) 250
t(f) Max. (S) 2.0u
Min hFE 100
Ic Max. (A) 30
@Ic (test) (A) 30
Tr Max. (s) 1.0u
Therm Res. ÚJC (°C/W) 1.8
Therm Res. (J-C) 500m
VCE(sat) Max. 2.0
Oper. Temp (°C) Max. 150
Isolated Case (Y/N) Yes
Pinout Equivalence Number 6-4
SKU 359043
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