MG50G2CL3

SKU: MG50G2CL3

MG50G2CL3 Transistor Silicon NPN CASE: X99 MAKE: Toshiba

Datasheet

MG50G2CL3 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	X99
Manufacturer	Toshiba
Vbr CBO	600
Vbr CEO	450
Ckts Per Dev.	1
Max. PD (W)	300
t(f) Max. (S)	2.0u
Min hFE	100
Ic Max. (A)	50
@Ic (test) (A)	50
Polarity	NPN
Tr Max. (s)	1.0u
Therm Res. ÚJC (°C/W)	1.3
Therm Res. (J-C)	410m
VCE(sat) Max.	2.0
Oper. Temp (°C) Max.	150
Isolated Case (Y/N)	Yes
Pinout Equivalence Number	5-5
Maximum Collector Power Dissipation (Pc)	300 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	600 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	50 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	520 pF
Forward Current Transfer Ratio (hFE), MIN	100
SKU	252966

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