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Home / Semiconductors / MG50N2YS1
MG50N2YS1

MG50N2YS1

SKU: MG50N2YS1
MG50N2YS1 SemiConductor CASE: MODULE MAKE: Toshiba
Datasheet
MG50N2YS1 Datasheet
Product specifications
Type SemiConductor
Case MODULE
Manufacturer Toshiba
Max. Burst (V) 1000
Ckts Per Dev. 1
Max. PD (W) 300
t(on) Delay (S) 1.0u
t(f) Max. (S) 1.0u
Ic Max. (A) 50
Ie Max. (A) 1.0m
I(ges) Max (A) 500n
Tr Max. (s) 1.0u
Therm Res. (J-C) 410m
VCE(sat) Max. 5.0
Oper. Temp (°C) Max. 150
Isolated Case (Y/N) Yes
Pinout Equivalence Number 7-12
SKU 252990