| MG50N2YS1 Datasheet |
| Type | SemiConductor | |
| Case | MODULE | |
| Manufacturer | Toshiba | |
| Max. Burst (V) | 1000 | |
| Ckts Per Dev. | 1 | |
| Max. PD (W) | 300 | |
| t(on) Delay (S) | 1.0u | |
| t(f) Max. (S) | 1.0u | |
| Ic Max. (A) | 50 | |
| Ie Max. (A) | 1.0m | |
| I(ges) Max (A) | 500n | |
| Tr Max. (s) | 1.0u | |
| Therm Res. (J-C) | 410m | |
| VCE(sat) Max. | 5.0 | |
| Oper. Temp (°C) Max. | 150 | |
| Isolated Case (Y/N) | Yes | |
| Pinout Equivalence Number | 7-12 | |
| SKU | 252990 | |