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MJ10012
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MJ10012

SKU: MJ10012
MJ10012 Transistor Silicon NPN - CASE: TO3 MAKE: NTE Electronics
Price: £11.99
+ VAT 20% for UK purchases
£11.99
Qty
+ VAT 20% for UK purchases
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Datasheet
MJ10012 Datasheet
Product specifications
Type Transistor Silicon NPN
Manufacturer NTE Electronics
Case TO3
Vbr CEO 400
Max. PD (W) 175
t(f) Max. (S) 15u
Max. hFE 2.0k
Min hFE 100
Ic Max. (A) 10
@Ic (test) (A) 6.0
Icbo Max. @Vcb Max. (A) 1.0m
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 500m
t(stor) Max. (S) 15u
Derate Above 25°C 1.0
@VCE (test) 6.0
Oper. Temp (°C) Max. 200
Pinout Equivalence Number 4-100
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 175 W
Maximum Collector-Base Voltage |Vcb| 550 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 350 pF
Forward Current Transfer Ratio (hFE), MIN 300
SKU 80159
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