| Type | Transistor Silicon NPN | |
| Case | TO3 | |
| Manufacturer | Motorola Semiconductor | |
| Vbr CEO | 550 | |
| Max. PD (W) | 175 | |
| t(on) Delay (S) | 200n | |
| t(f) Max. (S) | 1.0u | |
| Max. hFE | 250 | |
| Min hFE | 10 | |
| Ic Max. (A) | 10 | |
| @Ic (test) (A) | 10 | |
| Icbo Max. @Vcb Max. (A) | 5.0m+ | |
| Mat. | Silicon Logic | |
| Polarity | NPN | |
| Tr Max. (s) | 2.0u | |
| R(sat) (Û) | 250m | |
| t(stor) Max. (S) | 4.0u | |
| Derate Above 25°C | 1.0 | |
| @VCE (test) | 5.0 | |
| Oper. Temp (°C) Max. | 175 | |
| Pinout Equivalence Number | 3-38 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 175 W | |
| Maximum Collector-Base Voltage |Vcb| | 650 V | |
| Maximum Collector-Emitter Voltage |Vce| | 550 V | |
| Maximum Collector Current |Ic max| | 10 A | |
| Max. Operating Junction Temperature (Tj) | 200 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 20 | |
| SKU | 114598 | |