| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO3 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CEO |
350 |
| Max. PD (W) |
250 |
| t(on) Delay (S) |
200n |
| t(f) Max. (S) |
900n |
| Max. hFE |
600 |
| Min hFE |
50 |
| Ic Max. (A) |
40 |
| @Ic (test) (A) |
10 |
| Icbo Max. @Vcb Max. (A) |
250u |
| Mat. |
Silicon Logic |
| Polarity |
NPN |
| Tr Max. (s) |
1.2u |
| t(stor) Max. (S) |
2.5u |
| Derate Above 25°C |
1.4 |
| @VCE (test) |
5.0 |
| Oper. Temp (°C) Max. |
200 |
| Pinout Equivalence Number |
3-38 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
250 W |
| Maximum Collector-Base Voltage |Vcb| |
450 V |
| Maximum Collector-Emitter Voltage |Vce| |
350 V |
| Maximum Emitter-Base Voltage |Veb| |
8 V |
| Maximum Collector Current |Ic max| |
40 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Collector Capacitance (Cc) |
600 pF |
| Forward Current Transfer Ratio (hFE), MIN |
50 |
| SKU |
82314 |