MJ12010

SKU: MJ12010

MJ12010 Transistor Silicon NPN CASE: TO3 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Motorola Semiconductor
Vbr CEO	400
Max. PD (W)	100
t(f) Max. (S)	1.0u
Min hFE	30-
Ic Max. (A)	10
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Tr Max. (s)	1.0u
R(sat) (Û)	1.0
Derate Above 25°C	800m
Trans. Freq (Hz) Min.	6.0M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Emitter Voltage \|Vce\|	950 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	253982

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