The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
MJ13330
View detailed images (13)

MJ13330

SKU: MJ13330
MJ13330 Transistor Silicon NPN CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Generic
Vbr CEO 200
Max. PD (W) 175
t(f) Max. (S) 700n
Max. hFE 40
Min hFE 8.0
Ic Max. (A) 20
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 5.0m
Polarity NPN
Tr Max. (s) 1.0u
R(sat) (Û) 175m
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 5.0M
Oper. Temp (°C) Max. 200
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 175 W
Maximum Collector-Base Voltage |Vcb| 400 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 400 pF
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 253989
Back