Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
NTE Electronics |
Replacement For |
KDY56 |
Case |
TO3 |
Vbr CBO |
200 |
Vbr CEO |
120 |
Max. PD (W) |
180 |
Max. hFE |
70 |
Min hFE |
10 |
Ic Max. (A) |
15 |
@Ic (test) (A) |
4.0 |
Icbo Max. @Vcb Max. (A) |
100u |
Polarity |
NPN |
R(sat) (Û) |
300m |
Derate Above 25°C |
1.0 |
Trans. Freq (Hz) Min. |
800k |
Oper. Temp (°C) Max. |
200 |
@VCE (V) |
2.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
180 W |
Maximum Collector-Base Voltage |Vcb| |
200 V |
Maximum Collector-Emitter Voltage |Vce| |
120 V |
Maximum Emitter-Base Voltage |Veb| |
7 V |
Maximum Collector Current |Ic max| |
15 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Collector Capacitance (Cc) |
600 pF |
Transition Frequency (ft): |
0.8 MHz |
Forward Current Transfer Ratio (hFE), MIN |
20 |
SKU |
16714 |