| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO3 |
| Manufacturer |
NTE Electronics |
| Vbr CBO |
200 |
| Vbr CEO |
120 |
| Max. PD (W) |
180 |
| Derate (Amb) (W/°C) |
1.0 |
| Max. hFE |
70 |
| Min hFE |
10 |
| Ic Max. (A) |
15 |
| @Ic (test) (A) |
4.0 |
| Icbo Max. @Vcb Max. (A) |
100u |
| Polarity |
PNP |
| R(sat) (Û) |
300m |
| Trans. Freq (Hz) Min. |
2.2M |
| Oper. Temp (°C) Max. |
200 |
| @VCE (V) |
2.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
180 W |
| Maximum Collector-Base Voltage |Vcb| |
200 V |
| Maximum Collector-Emitter Voltage |Vce| |
120 V |
| Maximum Emitter-Base Voltage |Veb| |
7 V |
| Maximum Collector Current |Ic max| |
15 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Collector Capacitance (Cc) |
600 pF |
| Transition Frequency (ft): |
0.8 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
16825 |