| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
X99 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CEO |
550 |
| Ckts Per Dev. |
1 |
| Max. PD (W) |
800 |
| t(f) Max. (S) |
4.0u |
| Min hFE |
80 |
| Ic Max. (A) |
200 |
| @Ic (test) (A) |
200 |
| Polarity |
NPN |
| Tr Max. (s) |
2.0u |
| Oper. Temp (°C) Max. |
150 |
| Isolated Case (Y/N) |
Yes |
| Pinout Equivalence Number |
3-6 |
| Maximum Collector Power Dissipation (Pc) |
800 W |
| Maximum Collector-Base Voltage |Vcb| |
600 V |
| Maximum Collector-Emitter Voltage |Vce| |
600 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
200 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
1000 pF |
| Forward Current Transfer Ratio (hFE), MIN |
80 |
| SKU |
254011 |