| Type | Transistor Silicon PNP | |
| Case | TO66 | |
| Manufacturer | Motorola Semiconductor | |
| Vbr CBO | 90 | |
| Vbr CEO | 80 | |
| Max. PD (W) | 25 | |
| Derate (Amb) (W/°C) | 142m | |
| Max. hFE | 100 | |
| Min hFE | 20 | |
| Ic Max. (A) | 3.0 | |
| @Ic (test) (A) | 250 | |
| Icbo Max. @Vcb Max. (A) | 1.0m | |
| Polarity | PNP | |
| R(sat) (Û) | 800m | |
| Trans. Freq (Hz) Min. | 3.0M | |
| Oper. Temp (°C) Max. | 175 | |
| @VCE (V) | 4.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 25 W | |
| Maximum Collector-Emitter Voltage |Vce| | 80 V | |
| Maximum Collector Current |Ic max| | 3 A | |
| Max. Operating Junction Temperature (Tj) | 200 °C | |
| Transition Frequency (ft): | 3 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 20 | |
| SKU | 254016 | |