Weight |
0.01 kg
|
Case |
TO3 |
Type |
Transistor Silicon PNP |
Manufacturer |
ST Microelectronics - STM |
Vbr CBO |
100 |
Vbr CEO |
60 |
Max. PD (W) |
115 |
Derate (Amb) (W/°C) |
657m |
t(f) Max. (S) |
300n- |
Max. hFE |
70 |
Min hFE |
20 |
Ic Max. (A) |
15 |
@Ic (test) (A) |
4.0 |
Icbo Max. @Vcb Max. (A) |
700u |
Polarity |
PNP |
R(sat) (Û) |
300m |
Trans. Freq (Hz) Min. |
2.5M |
Oper. Temp (°C) Max. |
200 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
150 W |
Maximum Collector-Base Voltage |Vcb| |
100 V |
Maximum Collector-Emitter Voltage |Vce| |
60 V |
Maximum Emitter-Base Voltage |Veb| |
7 V |
Maximum Collector Current |Ic max| |
15 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Transition Frequency (ft): |
4 MHz |
Forward Current Transfer Ratio (hFE), MIN |
5 |
SKU |
16827 |