| Type | Transistor Silicon NPN | |
| Case | TO3 | |
| Manufacturer | Motorola Semiconductor | |
| Vbr CEO | 200 | |
| Max. PD (W) | 100 | |
| Max. hFE | 180 | |
| Min hFE | 20 | |
| @Ic (test) (A) | 500m | |
| Polarity | NPN | |
| R(sat) (Û) | 670m | |
| Derate Above 25°C | 666m | |
| Oper. Temp (°C) Max. | 175 | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 100 W | |
| Maximum Collector-Emitter Voltage |Vce| | 200 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 5 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 20 | |
| SKU | 254031 | |