| Weight |
0.05 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO66 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CBO |
500 |
| Vbr CEO |
300 |
| Max. PD (W) |
35 |
| Derate (Amb) (W/°C) |
200m |
| t(f) Max. (S) |
3.0u |
| Max. hFE |
80 |
| Min hFE |
8.0 |
| Ic Max. (A) |
2.0 |
| @Ic (test) (A) |
1.0 |
| Icbo Max. @Vcb Max. (A) |
5.0m |
| Polarity |
PNP |
| Tr Max. (s) |
500n |
| R(sat) (Û) |
1.3 |
| Trans. Freq (Hz) Min. |
15M |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
2.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
35 W |
| Maximum Collector-Base Voltage |Vcb| |
500 V |
| Maximum Collector-Emitter Voltage |Vce| |
300 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
2 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Collector Capacitance (Cc) |
120 pF |
| Transition Frequency (ft): |
15 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SKU |
254076 |