Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Motorola Semiconductor |
Case |
TO3 |
Vbr CEO |
400 |
Max. PD (W) |
125 |
Derate (Amb) (W/°C) |
714m |
t(f) Max. (S) |
500n |
Min hFE |
15 |
Ic Max. (A) |
8.0 |
@Ic (test) (A) |
2.0 |
Icbo Max. @Vcb Max. (A) |
3.0m+ |
Polarity |
NPN |
Tr Max. (s) |
500n |
Oper. Temp (°C) Max. |
200 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
125 W |
Maximum Collector-Base Voltage |Vcb| |
450 V |
Maximum Collector-Emitter Voltage |Vce| |
400 V |
Maximum Emitter-Base Voltage |Veb| |
6 V |
Maximum Collector Current |Ic max| |
8 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Collector Capacitance (Cc) |
400 pF |
Forward Current Transfer Ratio (hFE), MIN |
15 |
SKU |
82243 |