| Type | Transistor Silicon NPN | |
| Case | TO3 | |
| Manufacturer | Motorola Semiconductor | |
| Vbr CEO | 600 | |
| Max. PD (W) | 125 | |
| Ic Max. (A) | 4.0 | |
| Icbo Max. @Vcb Max. (A) | 1.0m | |
| Polarity | NPN | |
| Tr Max. (s) | 1.1u | |
| R(sat) (Û) | 666m | |
| Derate Above 25°C | 1.0 | |
| Oper. Temp (°C) Max. | 140 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 125 W | |
| Maximum Collector-Emitter Voltage |Vce| | 600 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 4 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 3 | |
| SKU | 254102 | |