MJD112-1

SKU: MJD112-1

MJD112-1 Transistor Silicon NPN CASE: TO251 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO251
Manufacturer	Motorola Semiconductor
Vbr CEO	100
Max. PD (W)	20
t(f) Max. (S)	4.5u-+
Min hFE	500
Ic Max. (A)	2.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	20u
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	2.6u-
R(sat) (Û)	1.2
Derate Above 25°C	160m
@VCE (test)	4.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	4-104
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	100 pF
Transition Frequency (ft):	25 MHz
Forward Current Transfer Ratio (hFE), MIN	6000
SKU	432844

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