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MJD127-1
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MJD127-1

SKU: MJD127-1
MJD127-1 Transistor Silicon PNP CASE: TO251 MAKE: ST Microelectronics - STM
Product specifications
Type Transistor Silicon PNP
Case TO251
Manufacturer ST Microelectronics - STM
Polarity PNP
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 300 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 6000
SKU 432848
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