The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
MJD13003
View detailed images (12)

MJD13003

SKU: MJD13003
MJD13003 Transistor Silicon NPN CASE: TO251 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO251
Manufacturer Motorola Semiconductor
Vbr CBO 700
Vbr CEO 400
Max. PD (W) 15
t(f) Max. (S) 700n
Max. hFE 40
Min hFE 8.0
Ic Max. (A) 1.5
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 1.0u
Derate Above 25°C 120m
Trans. Freq (Hz) Min. 4.0M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 4-33
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 9 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 21 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 5
SKU 1270507
Back