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MJD200
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MJD200

SKU: MJD200
MJD200 Transistor Silicon NPN CASE: TO251 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO251
Manufacturer Motorola Semiconductor
Vbr CBO 40
Vbr CEO 25
Max. PD (W) 13
Max. hFE 180
Min hFE 45
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 100m
Trans. Freq (Hz) Min. 65M
Oper. Temp (°C) Max. 150
@VCE (V) 1.0
Pinout Equivalence Number 4-33
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 12.5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 120 pF
Transition Frequency (ft): 65 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 254116
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