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MJD200G
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MJD200G

SKU: MJD200G
MJD200G Transistor Silicon NPN CASE: TO252 MAKE: ON Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO252
Manufacturer ON Semiconductor
Polarity NPN
Maximum Collector Power Dissipation (Pc) 12.5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 80 pF
Transition Frequency (ft): 65 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SMD Transistor Code J200G
SKU 514545
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